A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Low stress and thin Au-Ti film
Low stress and thin Au-Ti film
2002-11-11
FAURE Nicolas
2002-11-12
[email protected]
Low stress and thin Au-Ti film
[email protected]
2002-11-12
> -----Original Message-----
> From: FAURE Nicolas [mailto:[email protected]]
> Sent: Monday, November 11, 2002 8:47 AM
> To: '[email protected]'
> Subject: [mems-talk] Low stress and thin Au-Ti film
> I'm wondering what values could I use to obtain low stress
> Ti/Au thin films?
> May be you know where I could find these informations or
> people who are concerned with?

The stress varies with deposition conditions
and many papers have been written on the subject.

Here are some of my measured values:

Electron-beam deposited gold at 5 A/s: 40-60 MPa (low tensile stress)
Ion-beam deposited gold using 1250 eV argon: -510 - -540 MPa (high compressive
stress)
I haven't done sputtered gold, but it should be possible to find a
combination of power and pressure to give near-zero stress.
See the series of papers by Thorton and Hoffman for an explanation.

For titanium in a CPA DC magnetron sputterer,
20 mTorr of Ar, 2 kW, gave ~50 MPa (low tensile stress).

        --Kirt Williams Agilent Technologies


reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
The Branford Group
Addison Engineering
MEMS Technology Review
University Wafer