In the semiconductor world, Particle removal is typically achieved using an
SC-1 solution (NH4OH:H2O2:DIH20). For <1um sizes Megasonics are used.
Concentrations, temps, and Meg power vary a great deal from place to place.
Higher chemical concentrations and/or high temps will increase surface
roughening. With super critical cleans (e.g. <.02um)the trend is to use more
dilute chemistries at moderately elevated temps with a high quality
Megasonic.

I should state also that performing a critical clean is quite complex. How
the wafer is treated pre and post SC-1 as well as the drying technique play
a big role in the final product. The cleaning process really needs to be
optimized for your particular application.

For more info, look at some of the wet station company web sites, such as
scpglobal.com, fsi-intl.com, or akrion.com.

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of foo foo
Sent: Wednesday, December 18, 2002 1:23 AM
To: [email protected]
Subject: [mems-talk] wafer cleaning


Dear all

I have a general question concerning cleaning of Si-wafers. How can one
remove small particles, espescially Si-particles, in a gentle way.

Sincerly
Patrick





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