Hi everyone,

I am looking for the method or important parameter to fabricate half metal thin
film such as Bi,Te,Sb. using vacuum deposition
onto a SiN and SiO2 coated silicon.  I tried to deposit Sb and Bi from a
resistive heating boat under room temperature by deposition rate over 10nm/s.
However resistivity of my films are lower than bulk value. Does anyone know how?

Y.Yamagishi
HORIBA, Ltd.
Kyoto, Japan

E-mail: [email protected]