Roger,
      I used solid boron sources in England 40 years ago while manufacturing
transistors on 1" wafers.  We used solid B2O3 wafers and placed silicon wafer
face towards Boron wafer then next silicon wafer reverse of the first so the
face faced the boron wafer. I can not remember temperatures or gas flow but I
can contact the diffusion engineer who worked with me if you need to know.  Bill
Moffat

-----Original Message-----
From: Roger Brennan [mailto:[email protected]]
Sent: Tuesday, January 07, 2003 5:03 PM
To: 'General MEMS discussion'
Subject: RE: [mems-talk] Greetings!!!! I Have a Question Regarding
TheReaction of BN to S i


Hi Marc,


Boron solid sources have been around for well over 30 years.  Generally,
transistor and IC makers have viewed them with disdain while MEMS people
have been far more appreciative.  I found Techniglas (Columbus, Ohio) boron
sources to work rather well for two and three-micron deep diffusions.  (It
could be that the competition works well too - I don't know.)

It is my understanding that the boron is introduced into the silicon wafers
via a mechanism that involves B2O3  (i.e. probably no SiN formed on the
silicon).  I found the people at Techniglas rather knowledgeable.  They can
probably discuss the chemistry with considerable authority.  They can also
suggest recipes to get you started.

Here's a web site to get you started with Techniglas:

http://www.techneglas.com/web2/products/dopant/boron2.htm

By the way, solid sources are usually not recommended for sub-micron
diffusions.  Here, however, is a piece that talks about a process for
producing sub-micron diffusions using solid sources:

http://www.delphion.com/details?pn10=US05672541

Good luck to you,


Roger Brennan
8710 Gardners School Road
Stantonsburg, NC 27883
(252) 238-3377
[email protected]


-----Original Message-----
From:   Concepcion, Marc [SMTP:[email protected]]
Sent:   Sunday, January 05, 2003 11:23 PM
To:     '[email protected]'
Subject:        [mems-talk]  Greetings!!!! I Have a Question Regarding The
Reaction of BN to S     i

Greetings!!!! My name is Marc Anthony Concepcion, and I am a Process
Engineer from PerkinElmer Optoelectronics, Philippines.

I am searching on the Internet to confirm my impression that the Boron
Nitride when reacted to Silicon will result as follows:

6BN + 3Si --> 6B + N2 to Si3N4

Am I correct in the equation above??

Please e-mail me your knowledge on this. BN serves as a Source for Boron
Ions. The Boron Ions are P-Dopants to the Silicon Wafer to produce a P-Type
layer.

Thank You.



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