Dear all,

I am working with nanoimprint lithography to create sub 100nm
structures. For metal lift-off I use a double layer resist scheme PMMA
on LOL. It works fine. We are now changing from LOL to LOR and I have
some trouble with the reproducibility. I suspect that it has to do with
different solubility in the LOR from time to time.  I use diluted MF
319 as the developer. And the resist thickness is about 70nm. I prebake
at 180C for 30min. Does anyone have any experience working with LOR?
Have any one had similar problems?

Best regards
Patrick
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Patrick Carlberg
Ph.D.cand., M.Sc.Phys.
Biophysics & -nanosensors

Mail Address:
Division of Solid State Physics
Lund University
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