Hi all,
I'm looking for some suggestions in order to passivate the (110) surface
of cleaved GaAs: as soon as I cleave it, the surface is very reactive but
it quickly changes its structure in such a way that, after only few minutes
I can't etch the sample.
I appreciate if someone could provide me with a (simple) recipe for
surface passivation that will only passivate a couple of monolayer and
that, hopefully, is relatively easy to remove (in order to proceed with
wet etching).
I appreciate if you could also provide some reference to some work in
literature.
Thank you for all the help and suggestion you can provide
Fabio Altomare