Hi Lior and Jamil,
One of our vendors has worked with a company called BNP Science in Korea to
get silicon wafers bonded with a layer of nitride at the interface.
http://www.bnpsci.co.kr/new/eng_pro.htm
BNP also makes SOI wafers, so they may be worth looking at for your
application.
Regards,
Tanya Snyder
Agilent Technologies
-----Original Message-----
Hi Jamil,
We, in Hymite, are also interested.=20
I didn't find an SOI vendor who has the experience to do the bonding
with SiN.
If you have any interesting links to research works in that direction I
would very much like to hear about it.
Thanks,
Lior Shiv, M.Sc. Phys.
Team Leader
Hermetic packaging
Hymite A/S=20
DTU, Bldg. 325=20
DK-2800 Kgs. Lyngby
Tel: +45 4525 9140=20
Direct: +45 4525 9144=20
Mobil: +45 2674 4368
Fax: +45 4525 9156=20
[email protected]
www.hymite.com=20
-----Original Message-----
From: Jamil El-Ali [mailto:[email protected]]=20
Sent: 5. februar 2003 11:37
To: General MEMS discussion
Subject: JO: [mems-talk] Buried silicon nitride
Hi All,
I am interesting in obtaining some SOI wafers with a buried silicon
nitride layer instead of an oxide layer. I have searched the net and it
seems like there are some research in progress making such SOI wafers by
nitrogen implantation, an alternative to the SIMOX process. Does anyone
know if such SOI wafers are commercial available?=20
I guess it should also be possible to fabricate buried nitride SOI wafer
by standard bonding and cleaving, but I have not been able to find any
information so far.=20
Regards,
Jamil El-Ali
Jamil El-Ali
Mikroelektronik centret, MIC
The Technical University of Denmark, DTU
Building 345 East
Dk-2800 Lyngby
Denmark
=20
E-Mail: [email protected]
Direct phone: +45 45256319
fax: +45 45887762
