See my paper "An SOI-MEMS technology using substrate layer and bonded glass
as wafer-level package"

Sensors and Actuators A: Physical, Volume 96, Issue 1, 31 January 2002,
Pages 34-42

----- Original Message -----
From: A.K.Ismail 
To: 
Sent: Thursday, February 13, 2003 1:38 AM
Subject: [mems-talk] Anodic bonding SOI wafer and glass


> Hi,
>
> Does anybody has experience of how to bond SOI wafer to glass wafer using
> anodic bonding?
> Our SOI wafer is about 175-450 micron Si, 1 micron Oxide and 1 micron Si
p+.
> The interface bonding layer would be the 1 micron Si p+ layer on SOI wafer
> with another glass substrate. Your response would be appreciated.
>
> Thank you.
>
> A.K.Ismail
>
>
>
> _______________________________________________
> [email protected] mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/