Hi,It's more a MOD process than a sol-gel, I was just
used to calling it the latter. I use Titanium
Isopropoxide as the precursor, dissolve it in
n-propanol. It forms a solution and should be clear.
This solution is quite unstable though and you need to
spin it right away. I tend to make it as and when I
need it. After spinning, you'll need to anneal it at
~350oC to cyrstallize the oxide. I was able to make
very thin layers (~300 A) on metal substrates. And
like you I was interested in it for its high
dielectric constant. Ta2O5 also offers a relatively
high dielectric constant (~25), though it is much
lower than TiO2 (~100).

If high permittivity is what you're after, depending
on your application, you might want to consider
ferroelectric ceramics like PZT. It has quite a high
permittivity and crystallizes quite well on the Pt
electrode you're using. There are several methods to
deposit in the literature, from sputtering to MOD to
MOCVD.

As far as sputtering of TiO2 goes, the oxidation
problem seen with N2O shouldn't be there when you use
O2. Let us know how it goes if you try it.

Hope it helps,

Regards,
Swaroop Kaza
201 Marcus Hall,
Department of Electrical and Computer Engg.
University of Massachusetts, Amherst
Amherst, MA 01003
(413) 545-4207
email: [email protected]

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