Dear Ms. Carlo:

Brewer Science is developing a material that meets your description: a spin
applied material, cured at under 250 degrees Celsius, able to withstand 8 or
more hours of 85 degree Celsius KOH (35%).  This material is removed with
standard photoresist removal process.  If you go to our web site you can see
the paper presented on this material at Photonics West 2003.  (See "Etch
Protective Coating Paper" http://www.brewerscience.com/sm/sm_tech_info.html)
Our test results are being verified at several independent facilities and the
application process is being optimized.  This material will be available for
sampling this summer.

Best Regards

Mac Daily

[email protected] wrote:

> dear all,
> can you suggest a good organic material, depositable or spinnable at low
> temperature, to be used as a protection mask for long KOH etching process?
> ...... it should be lifted-off or etched easily in a chemistry which do
> not affect SiN layers.
> thank you for any help you can provide
>
> carlo
>
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