Dear Members,

we have fabricated Polysilicon Piezoresistors on Si(100) surface.The polysilicon
was doped with spin on dopant(phosphourous dopant) and drive in and oxidation
was done at same time at 1050C. The poly resistors are barely 5 microns distance
apart.when i measured the resistance value the value of the resistance differed
alot more than 300% change.

Can any one suggest me why this happened?

Thanks

kris







---------------------------------
Do you Yahoo!?
Yahoo! Tax Center - forms, calculators, tips, and more