Dear all,
 I have an heterostructure with InP and In_{0.53}Ga_{0.47}As and I'm
looking for a recipe to etch the InGaAs and leave as much of the InP as
possible.
Can any of you suggest a simple recipe for wet etching? And do you have
any idea of the etching rate for the two compound? And how about any
dependence on the crystallographic direction?
Thank you very much for all your help
Fabio