Dear Members,

we have fabricated Polysilicon Piezoresistors on Si(100) surface.The
polysilicon was doped with spin on dopant(phosphourous dopant) and drive
in and oxidation was done at same time at 1050C. The poly resistors are
barely 5 microns distance apart.when i measured the resistance value
the value of the resistance differed alot more than 300% change among the
adjacent resistors..

Can any one suggest me why this happened?

Thanks

kris






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