PEVCD SiN usually etches at an acceptable rate in aquous HF (unlike
stoichemetric LPCVD Si3N4).  You can also etch it with a fluorine based
plasma e.g. CF4, SF6 etc.  If you want good etch selectivity over Si, try
CHF3 with a little 02.

Roger Shile

----- Original Message -----
From: "Patrick Carlberg" 
To: 
Sent: Thursday, March 13, 2003 1:14 AM
Subject: [mems-talk] Etching of SiN


> Dear all,
>
> Could anyone tell me how what to use for dry and wet etching of SiN
> grown in PECVD (So there is probably some H in ther as well)
>
> Thanks
> Patrick Carlberg
> __________________________________________________
> Patrick Carlberg, Ph.D Student, MSc
> Lund University, Solid State Physics/Nanometer Consortium
> Box 118, SE-221 00 LUND, Sweden
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