Hi all,
I was thinking of a process which would involve a last step of HF wet
etching to create 4 micron deep trenches in silicon. I'm not sure how
long the photo resist can withstand the HF. The photo resist would be
Shipley 1813. I could use BOE also instead of HF but that would take
even longer. Has anyone does this before?

Thank you
--
Shweta Humad
Office: (404) 385-4306/2400