Hi Eric,

        I think we have the same etcher model as yours. We don't seem to
have etch resistance problem with photoresist, but we do have problem
stripping the DQN novolak positive photoresist completely by O2 plasma or
solvent. Our gas mixture is CF4/H2 for etching amorphous silicon and
silicon nitride. The characteristics of such mixture should be comparable
to CHF3 alone. But you add O2 to it, which can ash the photoresist
depending on your gas ratio (I think higher than 60% O2 is basically in
the ashing regime). What is your process time? Do you have problem
stripping post-RIE photoresist? Perhaps we can share our experience on
this etcher.


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3V1
Tel: (519) 729-6409, ext. 6014
Fax: (519) 746-6321
[email protected]
http://www.ece.uwaterloo.ca/~a-sidic




On Thu, 13 Mar 2003, Eric Johnson wrote:

> Dear Community,
>
> We have purchased a TRION Phantom etcher for etching fused silica and are
having some difficulties with selectivity of photoresist and a roughening of the
etched surface.  Does anyone have expierience with this etcher using CHF3 and O2
for the etching of silicon dioxide?
>
> Eric
>
> Eric G. Johnson, PhD
> Assistant Professor of Optics
> School of Optics/CREOL
> University of Central Florida
> P.O. Box 162700
> 4000 Central Florida Blvd
> Orlando, FL 32816-2700
> (407)823-6803
> Fax 823-6880
>
>
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