Dear Yair,
I normally use mixture NH4OH/H2O2 with the ratio of
1:2 or 1:3 at room temperature (both items are
concetrated) and 100 nm thick layer of Ti is removed
in about 30 - 40 seconds. It does not have any effect
on silicon oxide or silicon. Ammonia hydroxide does
atack silicon bu not with the presence of H2O2, which
suggests that the H2O2 oxidize the silicon surface and
the oxide is totaly inert.
Pavel

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