Dear MEMS-Colleagues,

We published a paper about an electrochemical etching technique for deep
trenches:
M. Christophersen, P. Merz, J. Quenzer, J. Carstensen , and H. Föll, Deep
electrochemical trench etching with organic hydrofluoric electrolytes, Sensors
and Actuators A, 88(3) (2001) 241-246

If you need more information, send me an email.

With best regards
    Marc


Marc Christophersen, PhD
University of Rochester
601 Elmwood Ave, Box CFH
Rochester, NY 14642
Email: [email protected]



General MEMS discussion  schrieb am 26.03.03 14:21:31:
>
> hi mems workers,
>
> can we, by any means control the side wall angle in
> etching the Si wafer with anisotropic KOH other than
> that permitted by the (111) etch stop layers?
>
> Also, can abyone let me know how we can get the
> vertical walls by etching away with KOH?
>
> Thanks and regards.
>
> Ramji Dhakal
> Binghamton, NY
>
> =====
> _________________________________________________________________Ramji Dhakal
>
> M S Mechanical Engineering,
> SUNY Binghamton, NY
>
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