Thank you for all theses details regarding RCA.

Best regards

Thierry

----- Original Message -----
From: "St.Clair, Loren" 
To: "'General MEMS discussion'" 
Sent: Wednesday, March 26, 2003 3:26 PM
Subject: RE: [mems-talk] etching silicon with RCA


>
> Thierry,
>
> The RCA clean has many variants.  The RCA1 is a mixture of ammonium
> hydroxide, hydrogen peroxide and water while the RCA2 is a mixture of
> hydrochloric acid, hydrogen peroxide and water.  The variations occur in
> bath mixing ratios, time and temperature.  I find the following works well
>
>        RCA1 NH4OH:H2O2:H2O 1:1:5 75?C 15
> min
>        RCA2 HCl: H2O2:H2O 1:1:6 75?C
> 15 min
>
> Regarding the etching of silicon in the RCA you might look at the ammonium
> hydroxide to hydrogen peroxide ratio in the RCA1.  Ammonium hydroxide pits
> silicon and in larger concentrations roughens silicon surfaces very fast.
>
> Take a look at Handbook of Semiconductor Wafer Cleaning Technology by
Werner
> Kern, the book discusses the RCA clean (SC) in great detail along with
other
> cleaning procedures and issues.
>
> Hope this helps,
>
> Loren.
>
>
>
>  -----Original Message-----
> From: thierry.bouchet [mailto:[email protected]]
> Sent: Tuesday, March 25, 2003 10:18 AM
> To: [email protected]
> Subject: [mems-talk] etching silicon with RCA
>
> I have a problem with this procedure RCA:
> HNO3
> Rinse H2O
> NH4OH + H2O + H2O2
>
> the silicon is etched and i see some white large area ?
>
> Why ?
>
>
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