Dear all

I use RIE with different SF6/O2 ratios to etch Si. I have Cr as an etch
mask. The problem is that after the etching I cannot remove the Cr etch
mask. Is there risk for deposition on the Cr-oxide? Can the S molecules
react somehow? Is there risk for polymerization? Do you have any
suggestions for solutions?

Sincerely
Patrick Carlberg
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Patrick Carlberg, Ph.D Student, MSc
Lund University, Solid State Physics/Nanometer Consortium
Box 118, SE-221 00 LUND, Sweden

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