I'm trying to make a metal lift-off by using a pmma mask written by
e-beam lithography. Prior de metal evaporation the substrate (SiO2/Si)
and the pmma mask as well were exposed to a short RIE etching done with
CF4/H2 gases. At the end of the story the problem is that the lift-off
is pretty difficult probably due to the surface modification of the
exposed pmma. Does someone can suggest me a good solvent for this kind
of lift-off?
Thanks
Lorenzo Sirigu
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Lorenzo Sirigu
Institute for Photonics and Quantum Electronics-EPFL
tel. +41-21-693 54 24
fax +41-21-693 54 80
http://imowww.epfl.ch/Nanoweb/default.htm
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