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Material: Polysilicon, film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Friction coefficient0.04LPCVD n+type film ,at the begining & from an abrupt increase in friction during scratching, width of scratch(1.5 um) at about 17-20 mN normal load(measured from SEM images),critical load=9 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient0.42LPCVD n+type film ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.5 um) at about 17-20 mN normal load(measured from SEM images),critical load=9 mN.J.Mater.Res,Vol.12,No.1,Jan 1997, p.59
Friction coefficient(final)0.42LPCVD film,n+type( phosphorous doped),Values obtained during scratching,critical load=9 mN,width of scratch(by SEM observations)=1.5 um,slight ploughing at the tip into the film right at the beginning.J.Mater.Res.,Vol.12,No.1,Jan1997, p.59
Friction coefficient(initial)0.04LPCVD film,n+type( phosphorous doped),Values obtained during scratching,critical load=9 mN,width of scratch(by SEM observations)=1.5 um,slight ploughing at the tip into the film right at the beginning.J.Mater.Res.,Vol.12,No.1,Jan1997, p.59
Friction coefficient,final0.05LPCVD n+type film,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,final0.16LPCVD n+type film, sliding against a single-crystal sapphire ball(diameter=3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.05LPCVD n+type film,sliding against a spherical diamond tip (tip radius, 20 um) at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency, and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient tempoerature of 22+-1 deg C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,initial0.16LPCVD film,n+type,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH.J.Mater.Res,Vol.12,No.1,Jan 1997, p.60
Friction coefficient,micro0.04Scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Friction coefficient,micro0.05Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Hardness11.5 GPaLPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Hardness10.5 GPaLPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Hardness,nanoindentation(at 100uN)12.5 GPaLapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Internal stress-0.18 GPaLPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.Sensors and Actuators,20(1989), p.138
Roughness(Rms)1.45 nmLPCVD film,n+type(phosphorous doped), value measured using AFM at a scan size of 1 um x 1 um.J. Mater. Res., Vol. 12 No. 1, Jan 1997, p.60
Roughness(Rms)1.07Scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Roughness(Rms)0.16Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)18 nmScan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Scratch depth,micro(at 40uN)18 nmLapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Shear Modulus69 GPaEquivalent to rigidity modulus,MCNC MUMPS Process, URL:http://titan.me.jhu.edu/~sharpe/ptt/ptt.html, Value deducted from the Young's modulus (169 GPa) and poisson ratio (0.22) by G = E{2(1 + v)}W.Sharpe,B.Yuan,R.Vaidyanathan,R.Edwards, Proceedings of the 10th MEMS Workshop,Nagoya,Japan,1997, p.424-429
Strain,Compressive0.006 .. 0.007LPCVD,thickness=230nm,oxide type=3.5um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Strain,Compressive0.0035 .. 0.0045LPCVD,thickness=230nm,oxide type=3.5um PSG, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer,annealed in N2 for 20 min at 1100C.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Strain,Compressive0.0035 .. 0.0045LPCVD,thickness=800 nm,oxide type=1.7 um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Strain,Compressive0.004 .. 0.005LPCVD,thickness=1.45um ,oxide type=1.1 um thermally grown, unannealed,value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive1.4 .. 1.6 GPaLPCVD,thickness=230nm,oxide type=3.5um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive0.8 .. 1 GPaLPCVD,thickness=230nm,oxide type=3.5um PSG, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer,annealed in N2 for 20 min at 1100C.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive0.8 .. 1 GPaLPCVD,thickness=800 nm,oxide type=1.7 um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive0.9 .. 1.1 GPaLPCVD,thickness=1.45um ,oxide type=1.1 um thermally grown, unannealed,value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,residual290 MPaUndoped,thickness=2.5um ,using wafer curvature experiments, as film is deposited.IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345
Stress,residual270 MPaUndoped,thickness=5 um ,using wafer curvature experiments, as film is deposited.IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345
Stress,residual350 MPaUndoped,thickness=2.5 um ,using wafer curvature experiments, after undergoing a wet oxidation at 1000C for 107min with the oxide layer subsiquently stripped.IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345
Stress,residual190 MPaUndoped,thickness=5 um ,using wafer curvature experiments, after undergoing a wet oxidation at 1000C for 107min with the oxide layer subsiquently stripped.IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.345
Tensile stress-5.2 .. 18.8 MPaThick film,value is for thickness higher than 10um,CVD film, deposited at RP(reduced press) or atm press,temperature of deposition from 870 to 1000C,grown on top of a standard LPCVD polysilicon on top of a 1um sacrificial SiO2 layer,assuming biaxial stress, value obtained from relation between Raman shift and stress.Sensors & Actuators,A51(1995), p.11
Wear depth,micro(at 40uN)25 nmLapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM).IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97
Young's Modulus201 GPaLPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus176 GPaLPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load.J.mater.Res,Vol. 12,No.1,Jan1997, p.59
Young's Modulus120 .. 180 GPaIn-situ B-doped ,for thickness upto 10um ,obtained by lateral resonant structure method.IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Young's Modulus152 .. 171 GPaObtained from laser induced ultrasonic surface wave method for a thickness of 0.4-0.5 um,choosing an intermediate density.Thin solid films 290-291(1996), p.309
Young's Modulus160 GPaLPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.Sensors and Actuators,20(1989), p.138
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